Title:
CHEMICAL VAPOR DEPOSITION FILM FORMING APPARATUS
Document Type and Number:
Japanese Patent JPS5828827
Kind Code:
A
Abstract:
PURPOSE:To easily prevent contamination of semiconductor substrate by particles of by-product generated at the upper surface of susceptor with simple structure in regard to a CVD film forming apparatus for forming the oxide film (SiO2) and nitride film (Si3N4) and polycrystalline silicon film (Poly-Si) etc. on the semiconductor substrate such as silicon wafer with the chemical vapor deposition (CVD) method. CONSTITUTION:The ring-shaped concaves 8 in the outer diameter R1 which is larger by 5mm. than the diameter R6 of the wafer and the inner diameter R2 which is smaller by 5mm. than the diameter R0 and in the thickness d1 of 3mm. are formed corresponding to the shape of wafer 6 on the upper surface of the susceptor 7 for placing thereon the wafer 6. In addition, the flat region 9 on which the wafer 6 at the center of concave 8 is placed is formed at the location in the depth d0 of 0.5mm. which is almost equal to the thickness of wafer 6 from the upper surface of susceptor 7 so that the surface of wafer 6 is set in the same level as the upper surface of susceptor 7 when the wafer 6 is placed.
Inventors:
KAJIYAMA MASAOKI
Application Number:
JP12611781A
Publication Date:
February 19, 1983
Filing Date:
August 12, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C23C16/458; H01L21/205; H01L21/31; (IPC1-7): H01L21/31
Attorney, Agent or Firm:
Toshio Nakao