Title:
MANUFACTURE OF REACTOR FOR CRYSTAL GROWTH
Document Type and Number:
Japanese Patent JPS6071590
Kind Code:
A
Abstract:
In order to prevent impurities, in particular a chlorine impurity, present in the wall of the vessel from diffusing into the interior of the vessel and there disturb the growth process of the crystal, a hollow member, in particular a tube (1), of quartz is provided on its inside with a coating of silicon dioxide, while argon, gaseous silane and a gaseous oxidant, for example, dinitrogen oxide and/or carbon dioxide are introduced into the hollow member heated at 250 DEG to 350 DEG C. and are converted by means of a microwave resonator (2) into a porous coating of silicon dioxide at a pressure between 20 and 30 mbar, which coating is sintered to form a coating which is preferably at least 50 mu m thick.
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Inventors:
DEIITERU KIYUPERUSU
KARURUUHAINTSU SHIERUHASU
KORUNERISU HENDORIKUSU YOANESU
HIOKU DEIYAN KOE
KARURUUHAINTSU SHIERUHASU
KORUNERISU HENDORIKUSU YOANESU
HIOKU DEIYAN KOE
Application Number:
JP17534384A
Publication Date:
April 23, 1985
Filing Date:
August 24, 1984
Export Citation:
Assignee:
PHILIPS NV
International Classes:
C30B13/14; C03C17/00; C03C17/23; C30B15/10; C30B35/00; (IPC1-7): C30B13/14; C30B15/10
Attorney, Agent or Firm:
Akihide Sugimura