Document Type and Number:
Japanese Patent JPS6146072
Kind Code:
B2
Abstract:
PURPOSE:To obtain the P-N multilayer structure automatically, by arranging P and N type impurity evaporating sources in the vicinity of the evaporating source of a main constituent elememt of a semiconductor thin film, and shielding the evaporation of one impurity during the growth of the thin film. CONSTITUTION:A growing substrate 11 is heated 12 in a vacuum evaporating device. The evaporating source 13 which contains a main semiconductor element and impurities in the vertical direction is provided. The evaporating sources 14 and 15 are symmetrically provided at the positions adjacent to the source 13. Between the evaporating sources and the growing substrate, are provided a mask 16 having a hole 17 with a required size, a main shielding plate 19, and a shielding plate 18 which opens and closes only the evaporating source 15. After the temperature of the growing substrate and the evaporating sources is stabilized, the shielding plate 19 is opened, and the shielding plate 18 is periodically opened and closed by monitoring the thickness of the film during the growth. In this method, the direction of the particles from the evaporating sources 13-15 is controlled by the hole 17 in the mask 16. For example, one side 3 of the N<+>P<++> multilayer structure becomes an N<+> layer, and the other side becomes a PP<++> layered body. Thus, the basically comb shaped P-N multilayer is completed.
Inventors:
SAKAMOTO SUMINORI
Application Number:
JP7513680A
Publication Date:
October 11, 1986
Filing Date:
June 04, 1980
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L31/04; H01L21/203; H01L25/04; H01L31/10