Title:
転写マスクブランク、転写マスク並びにその転写マスクを用いた転写方法
Document Type and Number:
Japanese Patent JP4346063
Kind Code:
B2
Abstract:
It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.
Inventors:
Naotake Sano
Morihisa Homoto
Yukio Iimura
Yuki Arizuka
Masaaki Kurihara
Hiroshi Nosue
Akira Yoshida
Morihisa Homoto
Yukio Iimura
Yuki Arizuka
Masaaki Kurihara
Hiroshi Nosue
Akira Yoshida
Application Number:
JP2002350837A
Publication Date:
October 14, 2009
Filing Date:
December 03, 2002
Export Citation:
Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
H01L21/027; G03F1/20; G03F1/22; G03F1/24; G03F1/68; G03F7/20
Domestic Patent References:
| JP8022940A | ||||
| JP10268506A | ||||
| JP55015256A | ||||
| JP5275319A | ||||
| JP2098125A | ||||
| JP11251210A | ||||
| JP53049953A | ||||
| JP7176473A | ||||
| JP3029313A |
Foreign References:
| US3742230 | ||||
| US3873824 | ||||
| EP0244496A1 |
Attorney, Agent or Firm:
Hiroshi Nagisawa
Ryukichi Abe
Hirukawa Masanobu
Norihiko Uchida
Hideo Sugai
Kenji Aoki
Akira Yonezawa
Ryukichi Abe
Hirukawa Masanobu
Norihiko Uchida
Hideo Sugai
Kenji Aoki
Akira Yonezawa