TRANSFER METHOD OF SILICON FOIL LAYER

Title:

TRANSFER METHOD OF SILICON FOIL LAYER

Document Type and Number:

Japanese Patent JP2023175814

Kind Code:

A

Abstract:

To provide a method for transferring a very thin silicon layer from a donor substrate to a handle substrate.SOLUTION: In a method, hydrogen (H2+ and/or H+) ions and helium (He+) ions are co-implanted into a donor substrate 100 at low ion energies. A damaged layer 130 is formed on the donor substrate 100 by annealing the co-implanted donor substrate. The depth of the damaged layer determines the thickness of the thin silicon layer transferred onto a semiconductor handle substrate 200.SELECTED DRAWING: Figure 1E

More Like This:

JP2006019604	COOLING WATER FILTER UNIT AND DEVICE TO BE COOLED
JP2005190262	METHOD FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT
JP2008098412	SILICON-CARBIDE SINGLE-CRYSTAL WAFER, AND MANUFACTURING METHOD THEREOF

Inventors:

GAURAB SAMANTA
SALVADOR ZEPEDA

Application Number:

JP2023149211A

Publication Date:

December 12, 2023

Filing Date:

September 14, 2023

Export Citation:

Click for automatic bibliography generation Help

Assignee:

GLOBALWAFERS CO LTD

International Classes:

H01L21/02; H01L21/265

Attorney, Agent or Firm:

Norito Yamao
Yoshiyuki Maebori
Haruo Nakano

Previous Patent: JPWO2023175813

Next Patent: Vaccines to protect against streptococcal infections