To suppress defects, e.g. pinholes, by employing a dielectric layer including an antistatic metal oxide layer having refractive index at a specified wavelength within a specified range.

A translucent electromagnetic wave shut-off film 2 is formed by laminating a dielectric layer 10 and a silver layer 11 alternately on one surface of a transparent substrate 1. A metal oxide layer forming the dielectric layer 10 contains a metal oxide having refractive index of 1.6-2.7 at a wavelength of 550 nm. A layer ensuring a preferably antistatic properties preferably has a specific resistance of 5 Ωcm or less. Since the metal oxide layer forming the dielectric layer 10 has antistatic properties, these layers can be protected against being charged when they are formed through sputtering. Consequently, micro-arcing can be suppressed, and a layer free of pinholes or foreign material adhesion can be obtained.