PURPOSE: To provide a transparent conductive film having the specific resistance less than 1×10-4Ωcm without losing the transparency under the condition of low temperature suitable to the thin film transistor manufacturing process.
CONSTITUTION: By a sputtering method using a gas including krypton, or a gas including xenon, a transparent conductive film 1 in which a specific crystal surface is oriented on the surface of a substrate 2 preferentially is formed. The transparent membrane made by laminating two or more layers having different density or different mobility alternatively is formed by this sputtering method. As a result, by the effect of reducing the sputtering of carriers in the transparent conductive crystal grains or in the crystal grain boundary, a conductive film with the specific resistance 1×10-4Ωcm, transparent in a visible light area, can be formed.
CHIYABARA KENICHI
KOZONO YUZO
