Title:
トンネル電界効果デバイス
Document Type and Number:
Japanese Patent JP5501463
Kind Code:
B2
Abstract:
An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.
Inventors:
Björk Michael Tea
Carg Shegfried F
Knock Hoa Kim
Riel Haiku E
Ries Walter H
Solomon Paul M
Carg Shegfried F
Knock Hoa Kim
Riel Haiku E
Ries Walter H
Solomon Paul M
Application Number:
JP2012526177A
Publication Date:
May 21, 2014
Filing Date:
August 30, 2010
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L29/66; B82Y30/00; H01L29/06; H01L29/786
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Tasaichi Tanae
Yoshihiro City