PURPOSE: To grow a uniform thin film on a base plate even if impurities are contained, by a method wherein the base plate is placed on one flat plate among two mutually opposed parallel flat plates under a high temp. and low pressure condition and a reactive gas is flowed to a direction almost parallel with the surfaces of these flat plates.
CONSTITUTION: For example, seven base plates 33 are placed on a flat plate 32 so as to contact total back surfaces of said base plates 33 with said flat plate 32. In this condition, a boat having the other flat plate 32 having a dimension same to that of the former flat plate 32 parallely oposed thereto so as to provide a predetermined space therebetween is inserted into a reaction tube 31 heated by an electric furnance 35 so as to make the flat plates 32 parallel with the long axis of said reaction tube 31. In this structure, while the gas in the reaction tube 31 is evacuated by a vacuum pump 36, a reactive gas is flowed into the reaction tube 31 from a gas source 34 to form a thin film. During this time, because the gas flowed between flat plates 32, 32 in parallel with the surfaces of the base plates 33, the gas stream above the base plates 33 is made uniform and the film thickness of the thin film formed on the base plate 33 is also made uniform.
| JP2009071210 | SUSCEPTOR AND EPITAXIAL GROWTH SYSTEM |
| JPH04125442 | [Title of the device] Sheet type CVD device |
TADACHI CHIYOTO
TOODA HITOSHI
TAKEUCHI HIDEAKI
MUROTA JIYUNICHI
SAWAI TAKASHI
