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Title:
VAPOR DEPOSITION METHOD OF ELECTRON EMITTING CARBON FILM BY ELECTRON CYCLOTRON RESONANCE PLASMA
Document Type and Number:
Japanese Patent JP2000045071
Kind Code:
A
Abstract:

To provide a method for producing a large surface flat panel.

In the electron cyclotron resonance plama vapor deposition method by which a plasma chamber in which an electron cyclotron resonance region 9 is formed on the inside is irradiated with a microwave, a gaseous mixture is ionized by the reduction of the pressure from 10-4 to 10-3 mbar, and ions and electrons are diffused in the direction of a substrate 3 along the line of magnetic force to form an electrically conductive and electron-emitting carbon film, the gaseous mixture contains the molecules of an organic material and hydrogen molecules, and the method includes a process in which the temp. of the substrate 3 is raised, plasma is generated from the ions of the gaseous mixture by the intensity of the magnetic field corresponding to the electron cyclotron resonance of the molecules of the organic material, the substrate is polarized to the positive or zero potential, the positive potential difference is made between the plasma and the substrate, and plasma is diffused toward the substrate whose temp. is raised to the one at which the vapor deposition of the electron emitting material occurs.


Inventors:
DELAUNAY MARC
SEMERIA MARIE-NOELLE
Application Number:
JP17909199A
Publication Date:
February 15, 2000
Filing Date:
June 24, 1999
Export Citation:
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Assignee:
COMMISSARIAT ENERGIE ATOMIQUE
International Classes:
C01B31/02; C01B31/04; C23C16/26; C23C16/27; C23C16/50; C23C16/511; H01J37/32; H05H1/18; H05H1/46; (IPC1-7): C23C16/26; C01B31/02; C01B31/04; C23C16/50; H05H1/46
Domestic Patent References:
JPH029787A1990-01-12
JPS63265890A1988-11-02
JPH03267375A1991-11-28
JPH06280019A1994-10-04
Attorney, Agent or Firm:
Yoshitaka Sonoda (1 outside)