Title:
VAPOR GROWTH METHOD FOR THIN FILM OF COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6081092
Kind Code:
A
Abstract:
PURPOSE:To prevent contamination due to silicon derived from a reaction tube and to eliminate problem of toxicity by allowing crystal to grow by causing reaction on a substrate by carrying a group V metal in the vapor phase and an alkylated product of a group III metal in the vapor phase to the substrate for the crystal. CONSTITUTION:Vapor of a group V metal held sufficiently in vapor state at a temp. higher than the sublimation temp. is introduced into a reaction tube 41 from a gas introducing port 46 in accompany with carrier gas. Vapor of an alkylated product of a group III metal is simultaneously introduced into the reaction tube 41 from a gas introducing port 49 in accompany with the carrier gas. Both kinds of vapor react on a substrate for crystal 48 held at 600-800 deg.C in the reaction tube 41 to grow thin film of group III-V compound semiconductor crystal on the substrate 48.
Inventors:
IKEDA MASAKIYO
KASHIYANAGI YUUZOU
KASHIYANAGI YUUZOU
Application Number:
JP18806083A
Publication Date:
May 09, 1985
Filing Date:
October 07, 1983
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD
International Classes:
C30B25/02; C30B29/40; H01L21/205; (IPC1-7): C30B25/02; C30B29/40; H01L21/205
Attorney, Agent or Firm:
Kiyoshi Minoura
Previous Patent: A control device for rail cars
Next Patent: CHEMICAL REACTION APPARATUS FOR VAPOR PHASE EPITAXIAL GROWTH
Next Patent: CHEMICAL REACTION APPARATUS FOR VAPOR PHASE EPITAXIAL GROWTH