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Title:
VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE AND NEURAL NETWORK APPARATUS
Document Type and Number:
Japanese Patent JP2023043142
Kind Code:
A
Abstract:
To provide a variable resistance element having small variation in characteristics.SOLUTION: A variable resistance element according to an embodiment changes to a low resistance state or a high resistance state. The variable resistance element comprises: a first transition metal compound layer; a second transition metal compound layer; and a lithium ion conductor layer. The first transition metal compound layer is connected to a first electrode, and is a metal compound containing lithium ions in a lattice interstice. The second transition metal compound layer is connected to a second electrode, and is a metal compound containing lithium ions in a lattice interstice. The lithium ion conductor layer is provided between the first transition metal compound layer and the second transition metal compound layer, and is a solid material that is permeable to the lithium ions and is less permeable to electrons.SELECTED DRAWING: Figure 1

Inventors:
MARUGAME TAKAO
MIZUSHIMA KOICHI
NISHI YOSHIFUMI
NOMURA KUMIKO
Application Number:
JP2022090344A
Publication Date:
March 28, 2023
Filing Date:
June 02, 2022
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H10B63/00; G06N3/063; G11C11/54; G11C13/00; H10N70/00; H10N99/00
Attorney, Agent or Firm:
Sakai International Patent Office