PURPOSE: To provide a vertical field effect transistor in which an improvement in high frequency characteristic and high withstand voltage are compatible.

CONSTITUTION: A drain electrode is provided on a rear surface of a semiconductor substrate 20 on the basis of a structure of a conventional vertical field effect transistor, in order to reduce an output capacity, a thick insulator layer is provided in a bottom of a channel base layer, and further in order to suppress a feedback capacity to a low value, it can be so superposed on a channel as to reduce superposed parts of a gate metal layer 28 and a drain layer. Further, in order to prevent generation of a MOS structure between wirings and a semiconductor layer connected to a passivation layer 32 for burying the layer 28 and a source electrode 33, part of the wiring connected to the electrode 33 is removed, a discontinuous part is provided, and a field plate structure can be formed. As a result, a vertical field effect transistor for obtaining predetermined characteristics is obtained in a range of 800MHz-1GHz, in which an input capacity, an output capacity, a feedback capacity, an ON resistance and a drain withstand voltage are excellent as compared with those of prior art.