Title:
ウエーハのレーザー加工方法
Document Type and Number:
Japanese Patent JP4813993
Kind Code:
B2
Abstract:
A wafer laser processing method for forming a deteriorated layer along streets in the inside of a wafer having streets formed in a lattice pattern on the front surface, the method comprising: an undulation area deteriorated layer forming step for applying a laser beam along the streets to the undulating area of the wafer without activating the focal point position adjustment means to form a deteriorated layer along the streets in the inside of the undulating area of the wafer; and a stable holding area deteriorated layer forming step for applying a laser beam along the streets to a stable holding area other than the undulating area of the wafer while the focal point position adjustment means is controlled based on a detection signal from the height position detection means to form a deteriorated layer along the streets in the inside of the stable holding area of the wafer.
Inventors:
Kazuma Sekiya
Koichi Shigematsu
Koichi Shigematsu
Application Number:
JP2006185085A
Publication Date:
November 09, 2011
Filing Date:
July 05, 2006
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/301; B23K26/38; B23K26/40; B23K101/40
Domestic Patent References:
| JP2005313182A | ||||
| JP2004105110A1 | ||||
| JP2005193284A |
Attorney, Agent or Firm:
Naozumi Ono
Sachiko Okunuki
Sachiko Okunuki