WAFER AND METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, DROPLET DISCHARGE HEAD, AND DROPLET DISCHARGE DEVICE

Japanese Patent JP2016032084

A

PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer which allows for creation of a uniform crystalline film of high quality.SOLUTION: A method of manufacturing a wafer has a step for forming an amorphous film on one side of a substrate, and a step for irradiating the other side of the substrate, i.e., the opposite side from the one side, with light and crystallizing a part of the amorphous film. In the step for crystallizing a part of the amorphous film, the light is irradiated so that the amorphous film formed in a predetermined area including the periphery on one side of the substrate is not crystallized but is left as it is, and the amorphous film formed in an area other than the predetermined area is crystallized and becoming a crystalline film.SELECTED DRAWING: Figure 2

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CHIN KENHO
MELANIE MEIXNER
JOCHEN STOLLENWERK
THEODOR SCHNELLER
ULRICH BUTGER

JP2014155401A

March 07, 2016

July 30, 2014

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RICOH CO LTD

H01L41/43; B41J2/16; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L41/09

JP2003020226A	2003-01-24
JP2012045539A	2012-03-08
JP2007317809A	2007-12-06
JP2004079711A	2004-03-11
JP2005039281A	2005-02-10

US20050059171A1

2005-03-17

Tadashige Ito
Tadahiko Ito

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