To provide a polishing pad with a quick polishing speed capable of imparting a wafer having an excellent thickness uniformity.
The polishing pad is used, in which a rotating wafer is polished by urging a polishing pad to a wafer surface and sliding and rubbing the rotating polishing pad to the wafer surface rotated by rotating a spindle shaft of a wafer chuck mechanism and a spindle shaft of the polishing pad. An abrasive cloth for sliding and rubbing the wafer surface of the polishing pad is a cloth formed to a non woven cloth having a bulk density of 0.075-0.13 g/cm3 in which a fiber having a fiber diameter of 310 μm and a fiber length of 3-20 cm indicates an alumina silicate mineral composition containing 12% by weight or more of a mullite crystal obtained by sintering an organic fiber having 70-80% by weight of alumina arid 30-20% by weight of silicon oxide.
KUBO TOMIO
Next Patent: CMP POLISHING PAD AND CMP PROCESSING DEVICE USING IT