Title:
ウエーハの加工方法
Document Type and Number:
Japanese Patent JP7453013
Kind Code:
B2
Abstract:
There is provided a wafer processing method including a protective member disposing step of disposing a protective member on a top surface of a wafer; a modified layer forming step of forming an annular modified layer by irradiating the wafer with a laser beam so as to position, within a peripheral surplus region, a condensing point of the laser beam having a wavelength transmissible through the wafer; a separating step of separating a part or a whole of the peripheral surplus region from the wafer by dividing the wafer with the annular modified layer as a starting point; and a grinding step of thinning the wafer by grinding an undersurface of the wafer. In the modified layer forming step, the modified layer is formed in a shape of a circular truncated cone whose diameter is decreased from the top surface to the undersurface of the wafer.
Inventors:
Masaru Nakamura
Application Number:
JP2020023244A
Publication Date:
March 19, 2024
Filing Date:
February 14, 2020
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/304; B23K26/53
Domestic Patent References:
| JP2006108532A | ||||
| JP2004111606A | ||||
| JP2017071074A |
Foreign References:
| CN104078345A |
Attorney, Agent or Firm:
Atago Patent Attorneys Office
Sachiko Okunuki
Tsuyoshi Tsukano
Yoshifumi Kaneko
Sachiko Okunuki
Tsuyoshi Tsukano
Yoshifumi Kaneko