Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3147048
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make the temp. distribution of a heating region uniform to avoid thermal deterioration from the central part of a finger and improve the reliability, by forming a drain source electrodes to be wide at the finger central part and narrow at the end.
SOLUTION: Au platings on a drain and source electrodes 3, 2 at a central part of a heating region are broader than the periphery, i.e., the Au platings on the fingers at both ends of the heating region have the same width at their ends (in the length wise direction) and middles but the platings at the middles of the fingers disposed nearer the center of the heating region become broader. In this structure, the width of Ohmic electrodes electrically connecting the drain and source to a semiconductor substrate is const. over the heating region and hence there is no influence on electric characteristics such as withstand voltage. This makes the temp. distribution approximately uniform over the heating region to suppress the thermal deterioration of the characteristics.
Inventors:
Kazunori Asano
Koji Ishikura
Koji Ishikura
Application Number:
JP26775097A
Publication Date:
March 19, 2001
Filing Date:
September 12, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L29/41; H01L21/338; H01L21/58; H01L23/34; H01L23/482; H01L29/417; H01L29/812; (IPC1-7): H01L21/338; H01L23/34; H01L29/41
Domestic Patent References:
| JP6310545A | ||||
| JP8195402A |
Attorney, Agent or Firm:
Asamichi Kato