PURPOSE: To increase wiring growing speed and low-resistance connecting with high throughput by providing an X, Y, Z stage for positioning samples in a subchamber provided in a main chamber, making both chambers a vacuum atmosphere, raising the temperature of the subchamber and raising the CVD gas pressure, and forming a sample into wiring.
CONSTITUTION: An LSI 1 is put on an X, Y, Z stage in a subchamber 20 provided in a main chamber 30. The subchamber 20 is supplied with CVD gas and its temperature is adjusted with a heating means. Accordingly, it can be taken in at high steam pressure, and wiring can be repaired at quick film forming speed, with high throughput, and with low resistance. And making both chambers 30, 20 a vacuum atmosphere prevents hot heat from being transmitted to the objective lens 31 in the main chamber 30. Besides, the temperature difference between both chambers 30, 20 can be made smaller, and a window 21 for taking in a laser beam can be made larger and thinner. Accordingly irradiation shift can be prevented, and it become possible to use an objective lens 31 of short working distance. Besides, as the temperature in the subchamber 20 is about 50°C it become possible to use a high N, A lens as an objective lens, and high-precision laser irradiation can be achieved.
| JPH04102329 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JPS55138253 | SEMICONDUCTOR DEVICE |
| JPH0265229 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
HONGO MIKIO
MIZUKOSHI KATSURO
SANO HIDEZO
HARAGUCHI TATSUHITO
TAKAHASHI TAKAHIKO
ITO FUMIKAZU
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