Title:
双方向スイッチ素子
Document Type and Number:
Japanese Patent JP7203361
Kind Code:
B2
Abstract:
A bidirectional switch element includes: a substrate; an AlzGa1-zN layer; an AlbGa1-bN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type Alx1Ga1-x1N layer; a p-type Alx2Ga1-x2N layer; an AlyGa1-yN layer; and an AlwGa1-wN layer. The AlzGa1-zN layer is formed over the substrate. The AlbGa1-bN layer is formed on the AlzGa1-zN layer. The AlyGa1-yN layer is interposed between the substrate and the AlzGa1-zN layer. The AlwGa1-wN layer is interposed between the substrate and the AlyGa1-yN layer and has a higher C concentration than the AlyGa1-yN layer.
Inventors:
Masanori Nomura
Hiroaki Ueno
Yuusuke Kinoshita
Yasuhiro Yamada
Hidetoshi Ishida
Hiroaki Ueno
Yuusuke Kinoshita
Yasuhiro Yamada
Hidetoshi Ishida
Application Number:
JP2020527374A
Publication Date:
January 13, 2023
Filing Date:
June 12, 2019
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/338; C23C16/34; H01L21/205; H01L21/337; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| JP2015115582A | ||||
| JP2017521869A | ||||
| JP2012243871A | ||||
| JP2001196575A |
Foreign References:
| WO2008062800A1 |
Attorney, Agent or Firm:
Hokuto Patent Attorneys Office
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