Title:
The design of the process chamber lid incorporating the plasma source for a short life kind
Document Type and Number:
Japanese Patent JP5909484
Kind Code:
B2
Abstract:
An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
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Inventors:
Khao Cheng-Ta
Lamb Highman W-H
Chang Mei
Or david tea
Denny Nicolas Earl
Yuan Xiao Xion (John)
Lamb Highman W-H
Chang Mei
Or david tea
Denny Nicolas Earl
Yuan Xiao Xion (John)
Application Number:
JP2013508214A
Publication Date:
April 26, 2016
Filing Date:
April 27, 2011
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/505; H01L21/285; H01L21/31; H05H1/46
Domestic Patent References:
| JP2002294454A | ||||
| JP11312674A | ||||
| JP2002158179A | ||||
| JP2005317958A | ||||
| JP8003749A | ||||
| JP2000345349A |
Foreign References:
| US20090139453 | ||||
| US20030172872 |
Attorney, Agent or Firm:
Koichi Tsujii
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
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