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Title:
4方弁を有する半導体素子の製造装置、半導体素子の製造装置の弁制御方法及びそれを用いた半導体素子の製造方法
Document Type and Number:
Japanese Patent JP5473184
Kind Code:
B2
Inventors:
Moto Akitoshi
Liu Yong Min
Kinbuchi
Kim Yong
Big swing
Kim Yu Hong
Application Number:
JP2006010304A
Publication Date:
April 16, 2014
Filing Date:
January 18, 2006
Export Citation:
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Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/31; C23C16/455
Domestic Patent References:
JP5047665A
JP7000175B2
JP2002095955A
JP4302138A
JP3023625A
JP61195043U
JP6147329A
JP4361531A
JP6163425A
JP4078388A
JP3062921A
JP2021618A
JP1220821A
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro