Title:
A drive method of a semiconductor device
Document Type and Number:
Japanese Patent JP6250955
Kind Code:
B2
Abstract:
A method for driving a semiconductor device capable of reducing an area of a multiplexer and reducing its power consumption is provided. In a method for operating a semiconductor device including a memory and a multiplexer, a first transistor is connected to a first capacitor, and a second transistor is connected to a second capacitor. In the multiplexer, in a third transistor, a source is connected to a first input terminal and a drain is connected to an output terminal and, in a fourth transistor, a source is connected to a second input terminal and a drain is connected to the output terminal. Further, a step of holding a first potential in a node to which the first transistor, the first capacitor, and a gate of the third transistor are connected and holding a second potential higher than the first potential in the node is included.
Inventors:
Yasuhiko Takemura
Application Number:
JP2013106112A
Publication Date:
December 20, 2017
Filing Date:
May 20, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K19/173; H03K17/693
Domestic Patent References:
| JP2003115754A | ||||
| JP2010114837A | ||||
| JP2011129896A |
Foreign References:
| WO2004059838A1 |
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