Title:
A group III nitride wafer and a production method for the same
Document Type and Number:
Japanese Patent JP6144347
Kind Code:
B2
Abstract:
The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
Inventors:
Tadaro Hashimoto
Let's, edward
Hoff, Sierra
Let's, edward
Hoff, Sierra
Application Number:
JP2015529788A
Publication Date:
June 07, 2017
Filing Date:
March 15, 2013
Export Citation:
Assignee:
Six Point Materials, Inc.
SEOUL SEMICONDUTOR CO., LTD.
SEOUL SEMICONDUTOR CO., LTD.
International Classes:
C30B29/38; B24B27/06; B24B37/10; B28D5/04; C30B7/10; C30B33/08; H01L21/304
Domestic Patent References:
| JP2011100860A | ||||
| JP2011121803A | ||||
| JP2007153712A | ||||
| JP2007297263A | ||||
| JP2004530306A | ||||
| JP2011042566A | ||||
| JP2010222247A |
Foreign References:
| US20100219505 |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Natsuki Morishita
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto
Natsuki Morishita
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto
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