Title:
高周波半導体装置
Document Type and Number:
Japanese Patent JP7239023
Kind Code:
B2
Abstract:
The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device (100) of the present invention, two adjacent unit transistor cells (7) and (8) are connected to one input second-order harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second-order harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells (7) and (8) is short-circuited at the frequency of a second-order harmonic.
Inventors:
Shinsuke Watanabe
Application Number:
JP2021569629A
Publication Date:
March 14, 2023
Filing Date:
January 07, 2020
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H03F3/68; H03F1/02; H03F3/193; H03F3/21
Domestic Patent References:
| JP200760616A | ||||
| JP832376A | ||||
| JP2012109825A | ||||
| JP20047616A | ||||
| JP200264345A | ||||
| JP2005294740A | ||||
| JP7183744A |
Foreign References:
| WO2017208328A1 | ||||
| WO2017203571A1 |
Attorney, Agent or Firm:
Patent Attorney Takada / Takahashi International Patent Office