Title:
赤外線発光ダイオード
Document Type and Number:
Japanese Patent JP7227357
Kind Code:
B2
Abstract:
An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively disposed on two opposite sides of the active layer, and are independently made of a semiconductor compound represented by (AlX3Ga1-X3)Y1In1-Y1P, wherein 0≤X3≤1 and 0≤Y1≤1. The first cladding layer is disposed on the first waveguide layer opposite to the active layer. The second cladding layer is disposed on the second waveguide layer opposite to the active layer.
Inventors:
Cai Hitomi
Xiao Shihiro
Xiao Shihiro
Application Number:
JP2021513333A
Publication Date:
February 21, 2023
Filing Date:
November 26, 2019
Export Citation:
Assignee:
Tianjin San'an Photoelectric Co., Ltd.
International Classes:
H01L33/30
Domestic Patent References:
| JP2015167245A | ||||
| JP2016076685A | ||||
| JP2011077496A | ||||
| JP2016051883A | ||||
| JP2019160845A |
Attorney, Agent or Firm:
Saegusa International Patent Office