Title:
LIGHT EMISSION ELEMENT
Document Type and Number:
Japanese Patent JP2023119551
Kind Code:
A
Abstract:
To provide a light emission element capable of enhancing output.SOLUTION: A light emission element includes in order: a first n side semiconductor layers each comprising a nitride semiconductor; a first active layer including a first well layer containing indium; a first p side semiconductor layer; a second n side semiconductor layer brought into contact with the first p side semiconductor layer; a second active layer including a second well layer containing indium; and a second p side semiconductor layer. The second active layer is positioned closer to the first active layer side than the second well layer, and has a first intermediate layer containing indium. An indium composition ratio of the first well layer is lower than the indium composition ratio of the second well layer. The indium composition ratio of the first intermediate layer is lower than the indium composition ratio of the first well layer. A thickness of the first intermediate layer is smaller than a thickness of the second well layer.SELECTED DRAWING: Figure 5
Inventors:
HAYASHI SEIICHI
Application Number:
JP2022132555A
Publication Date:
August 28, 2023
Filing Date:
August 23, 2022
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L33/08; H01L33/04; H01L33/32
Attorney, Agent or Firm:
Masahiko Hyugaji
Junichi Kozaki
Takato Uchida
Junichi Kozaki
Takato Uchida
Previous Patent: JPWO2023119550
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