Title:
A magnetic wall movement type memory cell and an initialization processing method for the same
Document Type and Number:
Japanese Patent JP6260873
Kind Code:
B2
Abstract:
Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed.
Inventors:
Nehashi Ryusuke
Noboru Sakimura
Naohiko Sugibayashi
Yukihide Tsuji
Ayuka Tada
Hiroaki Honjo
Hideo Ohno
Noboru Sakimura
Naohiko Sugibayashi
Yukihide Tsuji
Ayuka Tada
Hiroaki Honjo
Hideo Ohno
Application Number:
JP2014543195A
Publication Date:
January 17, 2018
Filing Date:
September 13, 2013
Export Citation:
Assignee:
NEC
Tohoku University
Tohoku University
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08
Foreign References:
| WO2010071174A1 | ||||
| WO2012127722A1 | ||||
| WO2009093387A1 | ||||
| WO2009019948A1 | ||||
| WO2010047276A1 | ||||
| US20080158707 |
Attorney, Agent or Firm:
Kenho Ikeda
Takashi Sasaki
Junichi Matsuda
Takashi Sasaki
Junichi Matsuda
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