Title:
A manufacturing method of the CMOS image sensor which protects a photo-diode from plasma damage
Document Type and Number:
Japanese Patent JP5976500
Kind Code:
B2
Abstract:
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.
More Like This:
| WO/2001/063321 | X-RAY IMAGING DEVICE AND METHOD OF MANUFACTURE THEREOF |
| WO/2009/146253 | IMAGE SENSOR WITH FOCUSING INTERCONNECTIONS |
Inventors:
Chahan Sob
Application Number:
JP2012239027A
Publication Date:
August 23, 2016
Filing Date:
October 30, 2012
Export Citation:
Assignee:
Intellectual Ventures ii Limited Liability Company
International Classes:
H01L27/146; H01L31/10; H04N5/369; H04N5/374
Domestic Patent References:
| JP2000012822A | ||||
| JP2007027748A | ||||
| JP2000012823A | ||||
| JP2004214665A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura