METHOD FOR FABRICATING CRYSTALLINE PHOTOVOLTAIC CELLS

Japanese Patent JP2016058720

A

PROBLEM TO BE SOLVED: To provide a method for fabricating good crystalline photovoltaic cells, such as crystalline silicon photovoltaic cells, where the number of process steps and/or the quantity of heat are reduced compared to known fabrication processes.SOLUTION: The method includes depositing a dielectric layer at first predetermined locations on a surface of a semiconductor substrate 10, and growing a doped epitaxial layer at second predetermined locations on a surface of the semiconductor substrate 10, the second predetermined locations being different from and non-overlapping with the first predetermined locations. The dielectric layer is maintained as a surface passivation layer 12 in a photovoltaic cell. The doped epitaxial layer forms an emitter region 13 or a front surface field region 11 of the photovoltaic cell.SELECTED DRAWING: Figure 1

WO/2011/042660	PRODUCTION OF THIN FILMS HAVING PHOTOVOLTAIC PROPERTIES AND CONTAINING A I-III-VI2-TYPEALLOY, COMPRISING SUCCESSIVE ELECTRODEPOSITS AND THERMAL POST-TREATMENT
JPS528989	METHOD AND APPARATUS FOR MAKING SINGLE CRYSTAL LAYERS
JP2015111721	ION-IMPLANTED SELECTIVE EMITTER SOLAR CELL INVOLVING IN-SITU SURFACE PASSIVATION

MARIA RECAMAN PAYO
FILIP DUERINCKX
MONICA ALEMAN

JP2015152455A

April 21, 2016

July 31, 2015

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IMEC VZW

H01L31/18; H01L31/068

JP2013239694A

2013-11-28

WO2013020868A1	2013-02-14
US20140166096A1	2014-06-19
US20140158187A1	2014-06-12
DE102010036893A1	2012-02-09
US20130025658A1	2013-01-31
US20130247981A1	2013-09-26

Takuji Yamada
Mitsuo Tanaka
Haruo Nakano

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