Title:
A manufacturing method of a diffused junction sputtering target assembly
Document Type and Number:
Japanese Patent JP6051492
Kind Code:
B2
Abstract:
A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
Inventors:
Miao, Weifang
Smothers, David Bee.
Ivanov, Eugene Wai.
Eric, Thead
Bailey, Robert S.
Heart, jeff
Smothers, David Bee.
Ivanov, Eugene Wai.
Eric, Thead
Bailey, Robert S.
Heart, jeff
Application Number:
JP2013553562A
Publication Date:
December 27, 2016
Filing Date:
February 09, 2012
Export Citation:
Assignee:
Tosoh SMD, Inc.
International Classes:
C23C14/34; B23K20/00
Domestic Patent References:
| JP9059770A | ||||
| JP6108246A | ||||
| JP2002129316A | ||||
| JP2002146524A | ||||
| JP11511206A | ||||
| JP2008096648A1 |
Attorney, Agent or Firm:
Akira Kano