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Title:
発光装置の作製方法
Document Type and Number:
Japanese Patent JP5577420
Kind Code:
B2
Abstract:
The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.

Inventors:
Alp 徹
Maruyama Junya
Shunpei Yamazaki
Application Number:
JP2013063653A
Publication Date:
August 20, 2014
Filing Date:
March 26, 2013
Export Citation:
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Assignee:
Incorporated company semiconductor energy research institute
International Classes:
H01L27/12; H01L29/786; H01L21/02; H01L21/336; H01L21/762; H01L21/77; H01L21/84; H01L51/50



 
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