Title:
A manufacturing method of an optical electromotive cell including preparation of the surface of a crystalline silicon board
Document Type and Number:
Japanese Patent JP6033687
Kind Code:
B2
Abstract:
A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.
Inventors:
Hubert, Morisot
Pierre, Mul
Pierre-Jean, Ribeiron
Pierre, Mul
Pierre-Jean, Ribeiron
Application Number:
JP2012550487A
Publication Date:
November 30, 2016
Filing Date:
January 26, 2011
Export Citation:
Assignee:
Comisaria Allenergy Atomic Eo Energy Alternative
International Classes:
H01L31/0236; H01L31/0747; H01L31/075
Domestic Patent References:
| JP2004172271A | ||||
| JP2011061030A | ||||
| JP7066437A | ||||
| JP2005524977A | ||||
| JP7038111A | ||||
| JP3271990B2 | ||||
| JP2008300440A |
Foreign References:
| WO2009094578A1 | ||||
| WO2010052541A1 |
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Previous Patent: The phase lock loop which has the digital compensation for analog integration
Next Patent: OPERATION MANAGING SYSTEM
Next Patent: OPERATION MANAGING SYSTEM