Title:
A manufacturing method and an organic EL display of a thin film transistor and a thin film transistor
Document Type and Number:
Japanese Patent JP6263721
Kind Code:
B2
Abstract:
A thin film transistor includes: a gate electrode; a gate insulating layer above the gate electrode; an oxide semiconductor layer disposed above the gate insulating layer; and a source electrode and a drain electrode disposed above the oxide semiconductor layer and electrically connected to the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer, and a fluorine concentration of the region close to the gate insulating layer in the oxide semiconductor layer is higher than a fluorine of a contact region for the source electrode or the drain electrode in the oxide semiconductor layer.
Inventors:
Mitsumasa Matsumoto
Application Number:
JP2016529054A
Publication Date:
January 24, 2018
Filing Date:
June 17, 2015
Export Citation:
Assignee:
Joled Co., Ltd.
International Classes:
H01L29/786; H01L51/50; H05B33/10; H05B44/00
Domestic Patent References:
| JP2011205081A | ||||
| JP2011109078A |
Foreign References:
| WO2011039853A1 |
Attorney, Agent or Firm:
Shuichi Yoshikawa
Masao Sakajima
Masao Sakajima
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