Title:
METHOD FOR MANUFACTURING PIEZOELECTRIC OXIDE WAFER
Document Type and Number:
Japanese Patent JP2018121179
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric oxide wafer, by which the occurrence of an irretrievable case, attributed to wrong discrimination about the surface from the backside of a piezoelectric oxide wafer, can be prevented with further reliability.SOLUTION: A method for manufacturing a piezoelectric oxide wafer according to an embodiment of the present invention comprises: a surface-backside determination step of determining, by a controller, the surface or backside of the piezoelectric oxide wafer depending on the polarization direction of the piezoelectric oxide wafer; and a beveling step of grinding and beveling an outer periphery of the piezoelectric oxide wafer. The surface-backside determination step is executed right before the beveling step.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
KOIKE TAKAYUKI
Application Number:
JP2017010701A
Publication Date:
August 02, 2018
Filing Date:
January 24, 2017
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
H03H3/08; B24B9/00; G01R29/22; H01L41/113; H01L41/337
Domestic Patent References:
| JP2014224693A | 2014-12-04 | |||
| JP2006156895A | 2006-06-15 | |||
| JP2008139152A | 2008-06-19 | |||
| JP2008130831A | 2008-06-05 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
Previous Patent: Point fixed speaker
Next Patent: A control program, a control method, and a control device
Next Patent: A control program, a control method, and a control device