Title:
A manufacturing method of a semiconductor device
Document Type and Number:
Japanese Patent JP6014196
Kind Code:
B2
Abstract:
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
Inventors:
Shunpei Yamazaki
Jun Koyama
Hiroyuki Miyake
Jun Koyama
Hiroyuki Miyake
Application Number:
JP2015079963A
Publication Date:
October 25, 2016
Filing Date:
April 09, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/20; H01L21/477; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2009099944A | ||||
| JP2009224479A | ||||
| JP11054761A | ||||
| JP7249778A | ||||
| JP2007123861A | ||||
| JP2008042088A |
Foreign References:
| WO2009034953A1 | ||||
| US20080116457 | ||||
| WO2009081885A1 |