Title:
A manufacturing method of a semiconductor device and a semiconductor device
Document Type and Number:
Japanese Patent JP6077382
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To inhibit reduction of oxygen in an insulation film capable of supplying oxygen by being heated; and inhibit oxidation of a conductive layer contacting the insulation film.SOLUTION: In order to inhibit reduction of oxygen in an insulation film capable of supplying oxygen by being heated and inhibit oxidation of a conductive layer, it is favorable to provide in the insulation layer, a region where oxygen is scarcely provided or received through an interface between the insulation film and the conductive layer. Accordingly, a region containing more nitrogen more than in the inside is provided near the interface between the insulation film and the conductive layer. For this purpose, a nitriding treatment is performed on a surface of the insulation film. Especially, after a contact hole to the conductive layer lying below a transistor using an oxide semiconductor is formed in the insulation film, the nitriding treatment including a side wall of the contact hole is performed.SELECTED DRAWING: Figure 1
Inventors:
Daigo Ito
Noda Kosei
Noda Kosei
Application Number:
JP2013097234A
Publication Date:
February 08, 2017
Filing Date:
May 06, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; H01L21/28; H01L21/768; H01L21/8234; H01L21/8238; H01L21/8242; H01L23/522; H01L27/08; H01L27/088; H01L27/092; H01L27/10; H01L27/105; H01L27/108; H01L27/115; H01L29/417; H01L29/786; H01L29/788; H01L29/792; H01L51/50; H05B33/10
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