Title:
A manufacturing method of a semiconductor layer, and a manufacturing method of a photoelectric conversion device
Document Type and Number:
Japanese Patent JP5934056
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor layer and a photoelectric conversion device which have high photoelectric conversion efficiency.SOLUTION: A method for manufacturing a photoelectric conversion device 11 comprises the steps of: forming a first film containing a metal element, a chalcogen element, and an organic compound; heating the first film to form a second film in which a part of the organic compound has been thermally decomposed; and heating the second film in an atmosphere containing a chalcogen element to form a semiconductor layer 3 containing a metal chalcogenide.
Inventors:
Nishimura Tayu
Kazuki Yamada
Kazuki Yamada
Application Number:
JP2012181986A
Publication Date:
June 15, 2016
Filing Date:
August 21, 2012
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L31/0749; H01L31/18
Domestic Patent References:
| JP2010129658A | ||||
| JP2010129641A |
Foreign References:
| WO2011017235A1 | ||||
| WO2011093278A1 |