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Title:
A manufacturing method of a semiconductor light element
Document Type and Number:
Japanese Patent JP5962022
Kind Code:
B2
Abstract:
A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure.

Inventors:
Kenji Hiratsuka
Application Number:
JP2012008298A
Publication Date:
August 03, 2016
Filing Date:
January 18, 2012
Export Citation:
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Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S5/026; G02B6/12; G02B6/136; G02F1/025; H01S5/223
Domestic Patent References:
JP2011258785A
JP2002169131A
JP2001117058A
JP63263770A
JP1094673A
JP2009016814A
JP2010520639A
Foreign References:
US20110206313
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichira Kondo