Title:
A manufacturing method of a silicon carbide covering black lead member, a silicon carbide covering black lead member, and a manufacturing method of a silicon crystal
Document Type and Number:
Japanese Patent JP6119586
Kind Code:
B2
Inventors:
Takayo Sugawara
Shunei Kouchi
Ryoji Hoshi
Shunei Kouchi
Ryoji Hoshi
Application Number:
JP2013252246A
Publication Date:
April 26, 2017
Filing Date:
December 05, 2013
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C04B41/87; C01B32/205; C01B32/956; C04B41/82
Domestic Patent References:
| JP2005281085A | ||||
| JP52006714A | ||||
| JP9190730A | ||||
| JP63166789A | ||||
| JP56096788A | ||||
| JP2011079725A | ||||
| JP3275579A | ||||
| JP11273835A |
Foreign References:
| WO2011043427A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya
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