Title:
A manufacturing method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6075185
Kind Code:
B2
Abstract:
A silicon carbide layer having a main surface and including a p-type region and an n-type region in contact with the p-type region is prepared. A metal layer in contact with the p-type region and the n-type region at the main surface is formed. The p-type region, the n-type region, and the metal layer are annealed. The step of forming a metal layer includes the steps of forming a first region in contact with the p-type region and the n-type region at the main surface and forming a second region arranged to be in contact with a surface of the first region opposite to a surface in contact with the main surface. The first region has an aluminum element and a silicon element. The second region has a titanium element.
Inventors:
Satoshi Tanaka
Shunsuke Yamada
Shunsuke Yamada
Application Number:
JP2013093687A
Publication Date:
February 08, 2017
Filing Date:
April 26, 2013
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/336; H01L21/28; H01L29/12; H01L29/417; H01L29/45; H01L29/78
Domestic Patent References:
| JP2012146838A | ||||
| JP2012099752A |
Foreign References:
| WO2009128382A1 |
Attorney, Agent or Firm:
Fukami patent office