A manufacturing method of a silicon carbide semiconductor device

Title:

A manufacturing method of a silicon carbide semiconductor device

Document Type and Number:

Japanese Patent JP6253518

Kind Code:

B2

Inventors:

Tsuyoshi Kitani
Yoichiro Tarui
Takashi Takashi

Application Number:

JP2014111860A

Publication Date:

December 27, 2017

Filing Date:

May 30, 2014

Export Citation:

Assignee:

Mitsubishi Electric Corporation

International Classes:

H01L21/336; H01L21/265; H01L21/306; H01L29/12; H01L29/739; H01L29/78

Domestic Patent References:

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

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