Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JP2016063187
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device, and to improve the use efficiency of a sputtering device.SOLUTION: When a thin film is deposited on a principal surface of a semiconductor wafer by using a magnetron system sputtering device in which a collimator 50a is installed in a space between the semiconductor wafer installed in a chamber and a target, reduction in wafer in-plane uniformity of the thin film generated with the progress of an integrated used amount of the target is suppressed by making a thickness in a region inside an outer peripheral part of the collimator 50a be thinner than a thickness at the outer peripheral part.SELECTED DRAWING: Figure 2
Inventors:
HAMAYA TAKASHI
TSUGANE HIDEAKI
SUZUKI SHUSUKE
TSUGANE HIDEAKI
SUZUKI SHUSUKE
Application Number:
JP2014192478A
Publication Date:
April 25, 2016
Filing Date:
September 22, 2014
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/285; C23C14/14; C23C14/34; H01L21/28; H01L21/768
Domestic Patent References:
JP2007273490A | 2007-10-18 | |||
JPH0718423A | 1995-01-20 | |||
JPH07307288A | 1995-11-21 | |||
JP2012134360A | 2012-07-12 | |||
JPH11140638A | 1999-05-25 |
Foreign References:
WO2004047160A1 | 2004-06-03 |
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji
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