Title:
酸化物単結晶の製造方法。
Document Type and Number:
Japanese Patent JP5195000
Kind Code:
B2
More Like This:
| JP7012306 | Trench MOS type Schottky diode and its manufacturing method |
| JP5030909 | How to grow zinc oxide single crystal layer |
| WO/2020/195355 | UNDERLYING SUBSTRATE |
Inventors:
Tetsuro Hirasaki
Kazuo Kurashige
Shunsuke Ueda
Kazuo Kurashige
Shunsuke Ueda
Application Number:
JP2008119786A
Publication Date:
May 08, 2013
Filing Date:
May 01, 2008
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
C30B29/16; C30B15/00
Domestic Patent References:
| JP2007230836A | ||||
| JP2007197230A | ||||
| JP6115931A | ||||
| JP2004123467A | ||||
| JP5186297A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshinori Shimizu
Yoshinori Shimizu