Title:
Nitride semiconductor laminates and semiconductor devices
Document Type and Number:
Japanese Patent JP6305137
Kind Code:
B2
Inventors:
Kazunari Fujikawa
Application Number:
JP2014054478A
Publication Date:
April 04, 2018
Filing Date:
March 18, 2014
Export Citation:
Assignee:
Sumitomo Chemical Co., Ltd.
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2013021124A | ||||
| JP2009117482A | ||||
| JP2009081177A | ||||
| JP2007273545A | ||||
| JP2013033829A | ||||
| JP2011243644A | ||||
| JP2012165020A | ||||
| JP2013008836A | ||||
| JP2007305954A |
Foreign References:
| WO2012053071A1 |
Other References:
松本功 他,シリコン基板上GaNパワーデバイスエピタキシャル成長用有機金属気相成長装置の現状と課題,Jounal of the vacuum Society of Japan,日本,日本真空協会,2011年12月15日,vol.54, No.6,P.376-380
Attorney, Agent or Firm:
Fukuoka Masahiro
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori
Hiromi Abe
Hideo Tachibana
Masahiro Shiratori