Title:
A nonvolatile memory device and an operation method for the same
Document Type and Number:
Japanese Patent JP6154986
Kind Code:
B2
Abstract:
A nonvolatile memory device includes a page region including a plurality of normal cells and a plurality of auxiliary cells, a detecting unit configured to output a pass signal when at least one cell is programmed with a voltage higher than a reference voltage among program target cells of the page region, a count storing unit configured to store a count in the plurality of auxiliary cells during a first program operation for the page region, wherein the count indicates a total number of program pulses applied to the at least one cell until the pass signal is outputted from the detecting unit, and a voltage setting unit configured to set a program start voltage for a second program operation of the page region based on the count stored in the plurality of auxiliary cells.
Inventors:
Han Jong Chul
Pak Sung Jae
Pak Sung Jae
Application Number:
JP2011187344A
Publication Date:
June 28, 2017
Filing Date:
August 30, 2011
Export Citation:
Assignee:
SK hynix Inc.
International Classes:
G11C16/02; G11C16/06
Domestic Patent References:
| JP2010182402A | ||||
| JP2004158053A | ||||
| JP200184788A | ||||
| JP2009283117A |
Attorney, Agent or Firm:
Hiroshi Okawa
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