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Title:
A photograph sensor containing a photo-diode, its manufacturing method, and it
Document Type and Number:
Japanese Patent JP6058881
Kind Code:
B2
Abstract:
A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.

Inventors:
Lee
Choi
Kure
Zhang
Chen Holy Hawk
Application Number:
JP2011228738A
Publication Date:
January 11, 2017
Filing Date:
October 18, 2011
Export Citation:
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Assignee:
Samsung Display Co.,Ltd.
International Classes:
H01L31/10
Domestic Patent References:
JP61006873A
JP2010531059A
JP2009135185A
JP51041983A
JP2010041058A
JP2011243950A
JP4174558A
JP2009238769A
Attorney, Agent or Firm:
Yoshifumi Saeki
Takashi Watanabe



 
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