Plasma processing equipment and plasma processing method

Japanese Patent JP6307220

B2

A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.

JP2009130267	METHOD AND DEVICE FOR CONTROLLING PROCESS GAS CONCENTRATION IN PLASMA REACTOR PROCESSING SYSTEM
WO/2014/055235	DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION
JP3905232	ETCHING METHOD

Takumi Tanto
Go Miya
Masaru Izawa
Yuichi Kawasaki

JP2013055872A

April 04, 2018

March 19, 2013

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Hitachi High-Technologies Corporation

H01L21/3065; H01L21/683

JP2010129766A
JP2012156277A
JP2011119515A
JP2008294146A

US20100126666
US20110132541
US20120186745
US20080289767

Yuji Toda

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