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Title:
A porous layer, its manufacturing method, and its use
Document Type and Number:
Japanese Patent JP6212471
Kind Code:
B2
Abstract:
The porous sol-gel silica layer (2) comprises a series of closed pores (10-90%) with smallest characteristic dimension of >= 20 nm. The porous layer is obtained with a solid blowing agent in a particulate form and is coated with a fluorinated organosilane or perfluoroalkylsilane. The pores have spherical or oval shape. The porous layer with pores of different sizes and proportions includes stack of porous layers with increased thickness. The porous layer has a refractive index of = 1.1 at 600 nm. The porous sol-gel silica layer (2) comprises a series of closed pores (10-90%) with smallest characteristic dimension of >= 20 nm. The porous layer is obtained with a solid blowing agent in a particulate form and is coated with a fluorinated organosilane or perfluoroalkylsilane. The pores have spherical or oval shape. The porous layer with pores of different sizes and proportions includes stack of porous layers with increased thickness. The porous layer has a refractive index of = 1.1 at 600 nm and is disposed on a sub-layer to be barrier with alkaline and to be adhesion promoter of silica or silicon oxide derivative such as silicon dioxide, silicon oxide under stoichiometric, oxycarbide, oxynitride or silicon oxycarbonitride. Independent claims are included for: (1) a coated substrate; (2) a solar module; (3) multiple glazing unit; and (4) a method for fabricating the porous sol-gel silica layer on asubstrate.

Inventors:
Arnault Yuiniard
Natalie Rohau
Sophie Betsson
Application Number:
JP2014241698A
Publication Date:
October 11, 2017
Filing Date:
November 28, 2014
Export Citation:
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Assignee:
Saint-Gobain Glass France
International Classes:
C03C27/10; B32B5/18; B32B7/02; B32B9/00; B32B17/08; B60J1/00; C03C17/22; C03C17/25; H01L31/0392; H01L31/048; H01L33/00; H01L51/50; H05B33/02
Domestic Patent References:
JP9314715A
Foreign References:
WO2006103575A1
Attorney, Agent or Firm:
Kawaguchi International Patent Office