The precursor for the GST film in an ALD/CVD process - Vertham Materials US, Limited Liability Company

Title:

The precursor for the GST film in an ALD/CVD process

Document Type and Number:

Japanese Patent JP6251300

Kind Code:

B2

Abstract:

A process of making an antimony-containing or bismuth containing film such as a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film uses a process selected from atomic layer deposition and chemical vapor deposition. A silylantimony precursor or silylbismuth precursor is used as a source of antimony or bismuth.

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Inventors:

Manchao Xiao
Ian Buchanan
Shinjang Ray

Application Number:

JP2016005184A

Publication Date:

December 20, 2017

Filing Date:

January 14, 2016

Export Citation:

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Assignee:

Vertham Materials US, Limited Liability Company

International Classes:

C23C16/18; C07F9/90; C07F9/94

Domestic Patent References:

JP2013508555A
JP2009215645A

Foreign References:

WO2011056519A2
US20120028410
US20110111556

Attorney, Agent or Firm:

Atsushi Aoki
Shinji Mitsuhashi
Kenji Kimura
Naori Kota

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